Nanoscale MOS Device Modeling

2D and 3D MOS device modeling with density gradient model is presented. The numerical model is so robust that quantum effect, impact ionization and self-heating can be included. The model is applied to analyze characteristics of nanometer scale SOIMOSFETs.

In addition, the activities of Bio-Nano Electronics Center of Toyo University, such as carbon nanotube devices will be mentioned.
Toru Toyabe received the B.S. and M.S. degrees in Physics , and the Ph.D. degree in electrical engineering from the University of Tokyo, Tokyo, Japan, in 1964,1966 and 1981, respectively. He was with Hitachi Central Research Laboratory, Hitachi Ltd., Tokyo, where he worked on GaAs devices and Si devices with two- and three-dimensional device simulations. He joined the Faculty of Engineering, Toyo University, Saitama, Japan in 1994 where he is now a professor of Dept. of Computational Science and Engineering. His research interests include SOI MOSFETs modeling with particular emphasis in quantum effects and trap models. Dr. Toyabe received IEEE Paul Rappaport Award in 1984 and Hattori Hoko Award in 1998.