InGaN Nanorods for LEDs with Novel 3D Active Layer

Nanostructures such as nanowires and core-shell nanorods are proposed to provide solutions for the two major challenges of today's InGaN-based LEDs: the reduction of efficiency with increasing Indium concentration and even for blue emission wavelength a significant efficiency reduction at elevated currents, what is known as "droop". This is enabled by the plastic relaxation of lattice mismatch induced strain, and by a drastic increase of the effective active area by exploiting the third dimension for the active layers. Simulation results on the design requirements for LED structures using the advantages of the said nanorods, challenges of the nanorod growth and the principle process steps to fabricate high brightness white LEDs will be presented.
Dr. Martin Strassburg is senior key expert and innovation manager at OSRAM Opto Semiconductors with special responsibilities for collaborations with external partners. He received his Ph.D. in semiconductor physics at the Technical University of Berlin in 2002. From 2003 "“ 2005 he worked as a Humboldt-fellow on the development of group-III nitride materials for solid-state lighting, high power electronics, solar cell and spintronics applications at Georgia Institute of Technology in Atlanta, USA. In 2005 he joined Osram Opto Semiconductors GmbH. In Mid 2006 he became responsible for the Nitride MOVPE development in the Advanced Concepts & Engineering department and since 2012 he is involved in innovation management taking the lead on open innovation activities at OSRAM OS. He holds numerous patents in optoelectronics applications and co-authored more than 100 papers on material development in this area.