Dissertation Defense
Growth and Characterization of Ultra-wide Bandgap III-N by Plasma-Assisted Molecular Beam Epitaxy
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N-type doping of ultra-wide bandgap aluminum nitride (AlN) is pivotal for electronic and optoelectronic applications as it enhances the material’s conductivity, enabling the fabrication of high-performance devices such as transistors, diodes, and sensors. The versatility and compatibility of n-type doped AlN with existing semiconductor technologies make it suitable for integration into various electronic and optoelectronic systems, while its thermal stability ensures reliability under extreme operating conditions. Furthermore, recent advancements in ultra-wide bandgap materials, such as InAlN, have shown significant potential for high-frequency RF applications, further expanding their utility in advanced electronic and optoelectronic applications.
In the first part, I will present the demonstration of controllable Si doping in N-polar AlN films grown on single crystal AlN substrates by plasma assisted molecular beam epitaxy (PAMBE). In the second part, I will highlights the investigation of polarization doping N-polar graded AlGaN films grown by PAMBE. Finally, I will present the optimization of high temperature grown of N-polar InAlN on single crystal N-polar GaN substrates and the demonstration of N-polar InAlN/GaN HEMTs grown by PAMBE.
Co-Chairs: Professor Elaheh Ahmadi and Professor L. Jay Guo