Dissertation Defense

GaN-Base Heterojunction Field-Effect Transistors for igh-Power high-Frequency MMIC Power Amplifiers and SAW Devices

Name: GaN-Base Heterojunction Field-Effect Transistors for igh-Power high-Frequency MMIC Power Amplifiers and SAW Devices
Start: 2005-06-06T13:00:00-04:00
End: 2005-06-06T13:00:00-04:00

William E. Sutton

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Monday, June 6, 2005 @ 1:00 pm
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Dissertation Defense

GaN-Base Heterojunction Field-Effect Transistors for igh-Power high-Frequency MMIC Power Amplifiers and SAW Devices

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