Advancing Ultrawide-Bandgap Semiconductors for Next-Generation Power and Radiation-Hardened Electronics

Abstract: Power electronics play a critical role in modern electrical infrastructures, from power grids and electric transportation to satellites and space exploration. With the rapid expansion of AI-driven computational data centers, the demand for energy-efficient power management has never been greater. However, significant energy loss as heat in existing power systems necessitates advanced semiconductor technologies for meeting the growing demands of modern power electronics, as conventional Si-based power devices approach their theoretical performance limits. Gallium Oxide (Ga₂O₃), with its ultra-wide bandgap, stands out as a promising candidate due to its excellent electrical properties and high breakdown field, enabling power devices to operate at extreme temperatures, withstand harsh radiation conditions, and handle high power with reduced size, weight, and enhanced efficiency. Despite these advantages, challenges remain in material synthesis, device optimization, thermal management, and their tolerance under extreme environment. This talk will provide a comprehensive overview of our research in advancing Ga₂O₃ technologies, spanning from material synthesis and heterostructure engineering to device development, thermal management, and radiation resilience. The development of high-quality epitaxy across various phases will be discussed, along with approaches for precise doping control, bandgap engineering, alloy composition optimization, and advanced techniques to enhance growth rates while achieving plasma damage-free in-situ etching for high-aspect-ratio 3D structures. The talk will also highlight our efforts on the advancement of in-situ dielectrics and power devices, thermal management strategies through diamond integration and the development of superconducting transition metal nitrides with III-nitride/oxide semiconductors for hybrid quantum system applications. The resilience of Ga₂O₃ power diodes under extreme radiation conditions will also be presented, with a focus on radiation-induced defect formation, charge trapping, compensation, performance degradation, and recovery strategies.

Bio: Dr. Anhar Bhuiyan is an Assistant Professor in the Department of Electrical and Computer Engineering at the University of Massachusetts Lowell. He earned his Ph.D. from The Ohio State University (OSU) in 2023, focusing on the development of ultra-wide bandgap Ga₂O₃ and its alloy (Al_xGa_1-x)₂O₃ semiconductors for next-generation high-power and high frequency electronic and ultraviolet optoelectronic applications. Dr. Bhuiyan (co)authored over 100 scientific publications including journal articles, refereed conferences and patents with several being recognized as Editor’s Pick, Hot Paper, Featured Article, Most Cited Articles, Most Read Editor’s pick and Most Read Scilights. He was nominated for the Exemplary Graduate Student Researcher in the College of Engineering at OSU and was awarded the Presidential Fellowship Award – the highest honor from the Graduate School. He was a Best Oral Presentation Award finalist at GOX-2023 and also a recipient of the Best Student Presentation Award at the 63^rd Electronic Materials Conference (EMC-2021).