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Dissertation Defense

Advances in p-type and Ambipolar Oxide Semiconductor Materials and Devices for Thin Film Electronics

Kishwar Mashooq
WHERE:
3316 EECS BuildingMap
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With the emergence of artificial intelligence, neural networks and autonomous robots, high performance computing technology has become increasingly vital. Heterointegration of thin-film electronics is being actively explored to enable the ongoing development of computing technology. Oxide semiconductors are promising materials for thin-film transistors (TFTs). While n-type oxide semiconductors have already been successfully commercialized in TFT applications, the absence of high-performance p-type oxide semiconductor TFTs limits further development of oxide semiconductor technology. The focus of my research is to investigate p-type and ambipolar SnO and Ta2SnO6 film devices to develop a suitable high-performance p-type oxide material.

First, I identified the process window required to achieve p-type SnO using RF sputtering. Through numerical simulation, I determined the dominant limiting factors for relatively poor p-type SnO TFT performance. To address these limitations, I introduced a floating metal capping layer on top of the p-type SnO channel, resulting in record-breaking performance for p-type SnO TFTs. Next, I developed ambipolar SnO TFTs with symmetric n-type and p-type conduction and designed an ambipolar SnO inverter with the highest inverter gain among any ambipolar inverters. Finally, I worked on identifying the process boundaries to achieve p-type Ta2SnO6 using a co-sputtering process.

 

Chair: Professor Becky (R.L.) Peterson