Electrical Engineering and Computer Science

Winter 2021: GaN-Based Electronic Devices

Winter 2021: GaN-Based Electronic Devices

Course No:
EECS 598-004
Credit Hours:
3 credits
Instructor:
Elaheh Ahmadi
Prerequisites:
EECS 320 or permission of instructor

Device performances are driven by new materials, scaling, and new device concepts such as bandstructure and polarization engineering. Semiconductor devices have mostly relied on Si but increasingly GaAs, InGaAs and heterostructures made from Si/SiGe, GaAs/AlGaAs etc have become important. Over the last few years one of the most exciting new entries has been the GaN based devices that provide new possibilities for lighting, displays and wireless communications. New physics based on polar charges and polar interfaces has become important as a result of the nitrides. For students to be able to participate in this and other exciting arena, a broad understanding of physics, materials properties and device concepts is required. 

More info (pdf)