Winter 2021: GaN-Based Electronic Devices

Device performances are driven by new materials, scaling, and new device concepts such as bandstructure and polarization engineering. Semiconductor devices have mostly relied on Si but increasingly GaAs, InGaAs and heterostructures made from Si/SiGe, GaAs/AlGaAs etc have become important. Over the last few years one of the most exciting new entries has been the GaN based devices that provide new possibilities for lighting, displays and wireless communications. New physics based on polar charges and polar interfaces has become important as a result of the nitrides. For students to be able to participate in this and other exciting arena, a broad understanding of physics, materials properties and device concepts is required.