Name: Growth and Characterization of Ultra-wide Bandgap III-N by Plasma-Assisted Molecular Beam Epitaxy
Start: 2024-08-02T11:00:00-04:00
End: 2024-08-02T13:00:00-04:00
Location: 1005 EECS Building

No events scheduled for July 28, 2024.

11:00 am

July 29 @ 11:00 am - 1:00 pm

Nanoscale and Alloy Engineering of III-Nitride Semiconductors for High-Efficiency Solar Photocatalysis and Optoelectronics

3316 EECS Building 1301 Beal Avenue, Ann Arbor

No events scheduled for July 30, 2024.

No events scheduled for July 31, 2024.

No events scheduled for August 1, 2024.

11:00 am

August 2 @ 11:00 am - 1:00 pm

Growth and Characterization of Ultra-wide Bandgap III-N by Plasma-Assisted Molecular Beam Epitaxy

1005 EECS Building 1301 Beal Ave, Ann Arbor

No events scheduled for August 3, 2024.

Events

Week of Events

Sun 28

Mon 29

Tue 30

Wed 31

Thu 1

Fri 2

Sat 3

Nanoscale and Alloy Engineering of III-Nitride Semiconductors for High-Efficiency Solar Photocatalysis and Optoelectronics

Nanoscale and Alloy Engineering of III-Nitride Semiconductors for High-Efficiency Solar Photocatalysis and Optoelectronics

Growth and Characterization of Ultra-wide Bandgap III-N by Plasma-Assisted Molecular Beam Epitaxy

Growth and Characterization of Ultra-wide Bandgap III-N by Plasma-Assisted Molecular Beam Epitaxy